Growth temperature effects on InxGa1−xN films studied by X-ray and photoluminescence - Scholars Portal Journals

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Growth temperature effects on In_xGa_1−xN films studied by X-ray and photoluminescence

Journal of Crystal Growth (June 1998), 189-190, pg. 57-60

Heng-Ching Lin; Chen-Ke Shu; Jehn Ou; Yung-Chung Pan; Wei-Kuo Chen; Wen-Hsiung Chen; Ming-Chih Lee

78.20.−e | 78.22.−m | InGaN | X-ray | Photoluminescence

| RefWorks WizFolio

Abstract
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The InGaN films were grown between 850°C and 600°C by the metalorganic chemical vapor deposition method and characterized by X-ray diffraction and photoluminescence (PL). The incorporation of In into the ternary films was found to increase from x=0.01 to 0.28 as the temperature decreases. In films grown at 750°C and higher, both the X-ray and PL results show gradual changes and indicate 5% In molar fraction difference that may be due to the alloy composition fluctuation. However, in films grown at 700°C and lower, the near band edge emission disappears and the impurity transitions (IT) become dominant in the PL spectra, in contrast to X-ray diffraction where the line width broadens sharply from less than 300arcsec to larger than 500arcsec. We also found that IT is relatively insensitive to the sample temperature. Besides, the correlation between enhancing PL intensity and patterned micro-structure is observed.

10.1016/S0022-0248(98)00158-4

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K. Reimann; M. Steube; D. Fröhlich; S.J. ClarkePresent address: Inorganic Chemistry Laboratory, University of Oxford, South Parks Road, Oxford OX1 3QR, UK.

Phonon spectrum of wurtzite GaN and AlN
V.Yu. Davydov; Yu.E. Kitaev; I.N. Goncharuk; A.M. Tsaregorodtsev; A.N. Smirnov; A.O. Lebedev; V.M. Botnaryk; Yu.V. Zhilyaev; M.B. Smirnov; A.P. Mirgorodsky; O.K. Semchinova

Raman studies of longitudinal optical phonon–plasmon coupling in GaN layers
N. Wieser; M. Klose; R. Dassow; F. Scholz; J. Off

Raman investigations of GaN films grown by pulsed laser deposition
Manfred Klose; Ralf Dassow; Michael Gross; Helmut Schröder

Electronic properties in doped GaN studied by Raman scattering
Hiroshi Harima; Hirokazu Sakashita; Toshiaki Inoue; Shin-ichi Nakashima

HREELS analysis of the vibrational and electronic properties of GaN film on sapphire(0001) grown by metalorganic chemical vapor deposition
T. Tsuruoka; N. Takahashi; R. Franchy; S. Ushioda; Y. Naoi; H. Sato; S. Sakai; Y. Shintani

Excitonic transitions in MBE grown h-GaN with cubic inclusions
Stefan Strauf; Peter Michler; Jürgen Gutowski; Hartmut Selke; Udo Birkle; Sven Einfeldt; Detlef Hommel

Photoreflectance study of band-gap renormalization in Si-doped GaN
Xiong Zhang; Soo-Jin Chua; Wei Liu; Kok-Boon Chong

The influence of the Al-content on the optical gain in AlGaN heterostructures
Jens Holst; Ludger Eckey; Axel Hoffmann; Oliver Ambacher; Martin Stutzmann

Lattice stability study of nitride semiconductors by the use of molecular dynamics calculation
Shigeru Matsumura; Takashi Inushima; Tadashi Shiraishi

Mechanical properties of the GaN thin films deposited on sapphire substrate
G. Yu; H. Ishikawa; T. Egawa; T. Soga; J. Watanabe; T. Jimbo; M. Umeno

Electrical characterization of n-GaN Schottky and PCVD-SiO₂/n-GaN interfaces
Masakazu Sawada; Takayuki Sawada; Yuji Yamagata; Kazuaki Imai; Hisahito Kimura; Masaki Yoshino; Kouichi Iizuka; Hidemasa Tomozawa

Effect of metal type on the contacts to n-type and p-type GaN
John Rennie; Masaaki Onomura; Shin-ya Nunoue; Gen-ichi Hatakoshi; Hideto Sugawara; Masayuki Ishikawa

Crystal orientation dependence of p-type contact resistance of GaN
Noriaki Mochida; Tohru Honda; Tomoe Shirasawa; Akira Inoue; Takahiro Sakaguchi; Fumio Koyama; Kenichi Iga

Effects of titanium silicide on AuSiTi/n-GaN ohmic contact systems
C.Y. Kim; S.-W. Kim; C.-H. Hong; D.-W. Kim; H.-K. Baik; C.N. Whang

Study on high-speed deep etching of GaN film by UV laser ablation
J. Zhang; K. Sugioka; S. Wada; H. Tashiro; K. Midorikawa

Etching of cubic GaN by annealing in hydrogen ambient
Hidenao Tanaka; Atsushi Nakadaira

Anodic etching of n-type GaN films in NaOH electrolyte with Cl ions
Mitsugu Ohkubo

An AlN/GaN insulated gate heterostructure field effect transistor with regrown n⁺GaN source and drain contact
Hiroji Kawai; Masaki Hara; Fumihiko Nakamura; Tsunerori Asatsuma; Toshimasa Kobayashi; Syunji Imanaga

One-dimensional simulation of charge control in a novel AlN/GaN insulated gate heterostructure field effect transistor with modulation doping
Syunji Imanaga; Hiroji Kawai

Optical and electrical properties of nano-crystalline GaN thin films and their application for thin-film transistor
Satoshi Kobayashi; Shuichi Nonomura; Kenichi Ushikoshi; Koichi Abe; Motoi Nishio; Hideyuki Furukawa; Tamihiro Gotoh; Shoji Nitta

Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures
A.V. Buyanov; J.P. Bergman; J.A. Sandberg; B.E. Sernelius; P.O. Holtz; J. Dalfors; B. Monemar; H. Amano; I. Akasaki

Weakly localized transport in modulation-doped GaN/AlGaN heterostructures
A.V. Buyanov; J.A. Sandberg; B.E. Sernelius; P.O. Holtz; J.P. Bergman; B. Monemar; H. Amano; I. Akasaki

Impact of defects on the carrier transport in GaN
M. Fehrer; S. Einfeldt; U. Birkle; T. Gollnik; D. Hommel

Minority carrier diffusion length in GaN and ZnSe
Takao Miyajima; Masafumi Ozawa; Tsunenori Asatsuma; Hiroji Kawai; Masao Ikeda

Electrical properties of n-GaN/n⁺-GaAs interfaces
Y. Kribes; I. Harrison; B. Tuck; T.S. Cheng; C.T. Foxon

High-power UV InGaN/AlGaN double-heterostructure LEDs
Takashi Mukai; Daisuke Morita; Shuji Nakamura

Device performance of ultra-violet emitting diodes grown by MBE
Markus Mayer; Arthur Pelzmann; Christoph Kirchner; Markus Schauler; Franz Eberhard; Markus Kamp; Peter Unger; Karl Joachim Ebeling

High-efficiency InGaN MQW blue and green LEDs
S.D. Lester; M.J. Ludowise; K.P. Killeen; B.H. Perez; J.N. Miller; S.J. Rosner

Recombination dynamics in GaN
O. Brandt; H.-J. Wünsche; H. YangPresent address: National Research Center for Optoelectronic Technology (NCOT), Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083, People's Republic of China.; R. KlannPresent address: CompuNet GmbH, Hörselbergstr. 7, D-81677 München, Germany.; J.R. Müllhäuser; K.H. Ploog

Magnetic resonance studies of GaN-based LEDs
William E. Carlos; Shuji Nakamura

Light emitting diodes as a monitor to study P-type doping of GaN-based heterostructures grown by MOVPE
B. Schineller; A. Guttzeit; F. Vertommen; O. Schön; M. Heuken; K. Heime; R. Beccard

Comprehensive studies of light emission from GaN/InGaN/AlGaN single-quantum-well structures
Marek Osiński; Piotr PerlinOn leave from: High Pressure Research Center “Unipress”, Sokolowska 29/37, PL-01142 Warsaw, Poland.Present address: Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Mail stop 2-200, Berkeley, CA 94720, USA.; Petr G. EliseevOn leave from: P.N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow, Russian Federation.; Jinhyun Lee; Vladimir A. Smagley

Effects of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting diodes
Marek Osiński; Daniel L. BartonAlso at: Sandia National Laboratories, P.O. Box 5800, Albuquerque, NM 87185-1081, USA.; Piotr PerlinOn leave from: High Pressure Research Center “Unipress”, Sokołowska 29/37, PL-01142 Warsaw, Poland.Present address: Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Mail stop 2-200, Berkeley, CA 94720, USA.; Jinhyun Lee

Blue radiative recombination due to hot electrons in InGaN single-quantum well LEDs
Hiromitsu Kudo; Yoichi Yamada; Tsunemasa Taguchi

Frequency dependence of the reverse-biased capacitance of blue and green light-emitting diodes
Yasuhito Zohta; Hisayoshi Kuroda; Riro Nii; Shuji Nakamura

Present status of InGaN/GaN/AlGaN-based laser diodes
Shuji Nakamura; Masayuki Senoh; Shin-ichi Nagahama; Naruhito Iwasa; Takao Yamada; Toshio Matsushita; Hiroyuki Kiyoku; Yasunobu Sugimoto; Tokuya Kozaki; Hitoshi Umemoto; Masahiko Sano; Kazuyuki Chocho

InGaN laser diode grown on 6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy
Akito Kuramata; Kay Domen; Reiko Soejima; Kazuhiko Horino; Shin-ichi Kubota; Toshiyuki Tanahashi

Stimulated emission with the longest wavelength in the blue region from GaInN/GaN multi-quantum well structures
Hiromitsu Sakai; Tetsuya Takeuchi; Shigetoshi Sota; Maki Katsuragawa; Miho Komori; Hiroshi Amano; Isamu Akasaki

Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD
M.P. Mack; A.C. Abare; M. Hansen; P. Kozodoy; S. Keller; U. Mishra; L.A. Coldren; S.P. DenBaars

Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diode with optimized well number
Fumihiko Nakamura; Toshimasa Kobayashi; Tsunenori Asatsuma; Kenji Funato; Katsunori Yanashima; Shigeki Hashimoto; Kaori Naganuma; Satoshi Tomioka; Takao Miyajima; Etsuo Morita; Hiroji Kawai; Masao Ikeda

Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching
M. Kneissl; D. Hofstetter; D.P. Bour; R. Donaldson; J. Walker; N.M. Johnson