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Growth and some properties of InxGa1−xN thin films by reactive evaporation Publisher Your
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Thin Solid Films (June 1995), 261 (1-2), pg. 87-89
Y. Sato; S. Sato 
InxGa1−xN thin films mainly having large InN molar fractions are grown on α-Al2O3 (0001) and GaAs (111) B substrates by reactive evaporation, and some properties of them are investigated. C-axis oriented InxGa1−xN films are similarly obtained on each substrate; however, their crystallinity deteriorates with increasing GaN molar fractions. Band gap energies of these films are also measured and the bowing parameter is estimated.
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